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|Section2= |Section7= }} Gallium(III) oxide (Ga2O3) is a chemical compound used in vacuum deposition and as part of the manufacturing of semiconductor devices.〔(【引用サイトリンク】title=Gallium oxide powder (Ga2O3) )〕 ==Preparation== Gallium oxide is precipitated in hydrated form upon neutralization of acidic or basic solution of gallium salt. Also, it is formed on heating gallium in air or by thermally decomposing gallium nitrate at 200-250˚C. It can occur in five different modifications, α,β,δ,γ and ε. Of these modifications β-Ga2O3 is the most stable form.〔Bailar, J; Emeléus, H; Nyholm, R; Trotman-Dickenson, A. Comprehensive Inorganic Chemistry. 1973, 1, 1091〕 抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)』 ■ウィキペディアで「Gallium(III) oxide」の詳細全文を読む スポンサード リンク
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